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DEIC421
RF MOSFET DRIVER 20 Ampere Ultrafast RF MOSFET Driver With Kelvin Connection Features
* Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes * Latch-Up Protected * High Peak Output Current: 20A Peak * Wide Operating Range: 8V to 30V * Rise and Fall Times of <4ns * Minimum Pulse Width of 8ns * High Capacitive Load Drive Capability: 4nF in <4ns * Matched Rise and Fall Times * 32ns Input to Output Delay Time * Low Output Impedance * Low Quiescent Supply Current * Kelvin input ground connection * Reduced internal inductance
Applications
* * * * * * * Driving RF MOSFETs Class D or E Switching Amplifier Drivers Multi-MHz Switch Mode Power Supplies (SMPS) Pulse Generators Acoustic Transducer Drivers Pulsed Laser Diode Drivers Pulse Transformer Driver
Description
The DEIC421 is a CMOS high speed high current gate driver specifically designed to drive MOSFETs in Class D, E, and RF applications at up to 45MHz, as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The DEIC421 is an improved version of the DEIC420. The DEIC421 has a Kelvin ground connection on the input side to allow the use of a common mode choke to avoid problems with ground bounce. The internal layout of the package has been improved to reduce inductance. The DEIC421 can source and sink 20A of peak current while producing voltage rise and fall times of less than 4ns, and minimum pulse widths of 8ns. The input of the driver is compatible with +5V or CMOS and is fully immune to latch up over the entire operating range. Its features and wide safety margin in operating voltage and power make the DEIC421 unmatched in performance and value. The DEIC421 is packaged in DEI's new 7 leaded low inductance RF package. The DEIC421 is a surface-mount device, and incorporates patented(1) RF layout techniques to minimize stray lead inductances for optimum switching performance.
(1)
DEI U.S. Patent #4,891,686
Figure 1 - DEIC421 Functional Diagram
VCC
IN
OUT
IN GND
DGND
DEIC421
RF MOSFET DRIVER Absolute Maximum Ratings
Parameter
Supply Voltage Input Pin All Other Pins Power Dissipation TAMBIENT 25C TCASE 25C 30V -5V to VCC+0.3V -0.3V to VCC+0.3V 2W 100W
Value
Parameter
Storage Temperature Soldering Lead Temperature (10 seconds maximum) Maximum Junction Temperature Operating Temperature Range Thermal Impedance Rth(JC) (Junction to Case)
Value
65C to 150C 300C 150C -40C to 85C 1.3C/W
Electrical Characteristics
Unless otherwise noted, TA = 25 C, 8V VCC 30V. All voltage measurements with respect to DGND. DEIC421 configured as described in Test Conditions.
Symbol VIH VIL VIN IIN VOH VOL ROH ROL IPEAK IDC fMAX tR tF tONDLY tOFFDLY PWmin VCC ICC
(1)
Parameter High input voltage Low input voltage Input voltage range Input current High output voltage Low output voltage Output resistance @ output high Output resistance @ output low Peak output current Continuous output current Maximum frequency Rise time(1) Fall time(1) On-time propagation delay(1) Off-time propagation delay(1) Minimum pulse width Power supply voltage Power supply current
Test Conditions
Min 3.5
Typ
Max
Units V
0.8 -5 0V VIN VCC -10 VCC - .025 0.025 IOUT = 10mA, VCC = 15V IOUT = 10mA, VCC = 15V VCC = 15V 0.4 0.4 20 4 CL = 4nF, VCC = 15V CL = 1nF, VCC = 15V, VOH = 2V to 12V CL = 4nF, VCC = 15V, VOH = 2V to 12V CL = 1nF, VCC = 15V, VOH = 12V to 2V CL = 4nF, VCC = 15V, VOH = 12V to 2V CL = 4nF, VCC = 15V CL = 4nF, VCC = 15V FWHM, CL = 1nF, VCC = 15V +3V to +3V, CL = 1nF, VCC = 15V 8 VIN = 3.5V VIN = 0V VIN = +VCC 3 4 3 3.5 32 29 8 9 15 1 0 30 3 10 10 38 35 45 0.6 0.6 VCC + 0.3 10
V V mA V V A A MHz ns ns ns ns ns ns ns ns V mA A A
Refer to Figures 2 and 3
Specifications Subject To Change Without Notice
DEIC421
RF MOSFET DRIVER Lead Description
SYMBOL VCC IN IN GND OUT GND FUNCTION Supply Voltage Input Input Ground Output Power Ground DESCRIPTION Positive power-supply voltage input. These leads provide power to the entire chip. The range for this voltage is 8V to 30V. Input signal. TTL and CMOS compatible. 5V to 8V optimum. Input ground Kelvin connection. Driver output. For application purposes, this lead is connected directly to the gate of a MOSFET. Power grounds should be connected to a low noise analog ground plane for optimum performance.
Note: Operating the device beyond parameters with listed "absolute maximum ratings" may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. Figure 2 - Characteristics Test Diagram
Vcc + 10uF Choke GND CL OUT IN GND
IN
Vcc
Vcc
GND
Figure 3 - Timing Diagram
5V 90% INPUT 2.5V 10% 0V tONDLY PWMIN tR tOFFDLY tF
Vcc 90% OUTPUT
10% 0V
DEIC421
RF MOSFET DRIVER
DEIC421
RF MOSFET DRIVER
Fig. 11
5.0 4.5 4.0 3.5 3.0 2.5 2.0 10.0 15.0 20.0 25.0 30.0
Threshold vs. Supply Voltage
Threshold Voltage (V)
V C C ( V) Supply Voltage (V)
DEIC421
RF MOSFET DRIVER
Typical Output Waveforms
Unless otherwise noted, all waveforms are taken driving a 1nF load, 1 MHz repetition frequency, VCC = 15V, case temperature = 25C
Fig. 12
3ns Rise Time
Fig. 13
3ns Fall Time
Fig. 14
<8ns Minimum Pulse Width
Fig. 15
1MHz CW Repetition Frequency
Fig. 16
13.56MHz CW Repetition Frequency
Fig. 17
50MHz Burst Repetition Frequency
DEIC421
RF MOSFET DRIVER Applications Information
Introduction Circuits capable of very high switching speeds and high frequency operation require close attention to several important issues. Key elements include circuit loop inductance, Vcc bypassing, and grounding. Circuit Loop Inductance The Vcc to Vcc Ground current path defines the loop which will generate the inductive term. This loop must be kept as short as possible. The output lead must be no further than 0.375 inches (9.5mm) from the gate of the MOSFET. Furthermore, the output ground leads must provide a balanced symmetric coplanar ground return for optimum operation. Vcc Bypassing In order to turn a MOSFET on properly, the DEIC421 must be able to draw up to 20A of current from the Vcc power supply in 2-6ns (depending upon the input capacitance of the MOSFET being driven). Good performance requires very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value much larger than the load capacitance. Usually, this is achieved by placing two or three different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse-current-service capacitors.) Care should be taken to keep the lengths of the leads between these bypass capacitors and the DEIC421 to an absolute minimum. The bypassing should be comprised of several values of chip capacitors symmetrically placed on either side of the IC. Recommended values are .01uF and .47uF chips and at least two 4.7uF tantalums. Grounding In order for the design to turn the load off properly, the DEIC421 must be able to drain this 20A of current into an adequate grounding system. There are two paths for returning current that need to be considered: Path #1 is between the DEIC421 and its load, and path #2 is between the DEIC421 and its power supply. Both of these paths should be as low in resistance and inductance as possible, and thus as short as practical. The DEI421 has separate ground leads for input and power which allows the addition of a common mode choke in the input and input ground leads (see Fig. 2). The common mode choke will provide a means of preventing ground bounce from affect the input to the driver. The selection of the common mode choke is related to the device being driven, the board layout, and the Vcc bypassing. Output Lead Inductance Of equal importance to supply bypassing and grounding are issues related to the output lead inductance. Every effort should be made to keep the leads between the driver and its load as short and wide as possible, and treated as coplanar transmission lines. In configurations where the optimum configuration of circuit layout and bypassing cannot be used, a series resistance of a few ohms in the gate lead may be necessary to prevent ringing. Heat Sinking For high power operation, the bottom side metalized substrate should be placed in compression against an appropriate heat sink. The substrate is metalized for improved heat dissipation, and is not electrically connected to the device or to ground. See the DEI technical note "DE-Series MOSFET and IC Mounting Instructions" on the IXYSRF website at www.ixysrf.com for detailed mounting instructions.
DEIC421
RF MOSFET DRIVER
Figure 18 - DEIC421 Package Outline
IXYS RF An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: deiinfo@directedenergy.com www.directedenergy.com
IXYS RF reserves the right to change limits, test conditions and dimensions without notice. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002

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